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1/13 june 2004 stP9NK50Z - stP9NK50Zfp stb9nk50z - stb9nk50z-1 n-channel 500v - 0.72 ? - 7.2a to-220/fp/d 2 pak/i 2 pak zener-protected supermesh? mosfet typical r ds (on) = 0.72 ? extremely high dv/dt capability 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufacturing repeatibility description the supermesh? series is obtained through an extreme optimization of st?s well established strip- based powermesh? layout. in addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. such series comple- ments st full range of high voltage mosfets in- cluding revolutionary mdmesh? products. applications high current, high speed switching ideal for off-line power supplies, adaptors and pfc lighting ordering information type v dss r ds(on) i d pw stP9NK50Z stP9NK50Zfp stb9nk50z stb9nk50z-1 500 v 500 v 500 v 500 v <0.85 ? <0.85 ? <0.85 ? <0.85 ? 7.2 a 7.2 a 7.2 a 7.2 a 110 w 30 w 110 w 110 w sales type marking package packaging stP9NK50Z P9NK50Z to-220 tube stP9NK50Zfp P9NK50Zfp to-220fp tube stb9nk50zt4 b9nk50z d 2 pa k tape & reel stb9nk50z-1 b9nk50z i 2 pa k tube to-220 to-220fp 1 2 3 1 3 d 2 pak 1 2 3 i 2 pak internal schematic diagram www.datasheet.co.kr datasheet pdf - http://www..net/
stP9NK50Z - stP9NK50Zfp - stb9nk50z - stb9nk50z-1 2/13 absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 7.2a, di/dt 200a/s, v dd v (br)dss ,t j t jmax. (*) limited only by maximum temperature allowed thermal data avalanche characteristics gate-source zener diode protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device ? s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. in this respect the zener voltage is appropriate to achieve an efficient and cost- effective intervention to protect the device ? s integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit stP9NK50Z stb9nk50z stb9nk50z-1 stP9NK50Zfp v ds drain-source voltage (v gs =0) 500 v v dgr drain-gate voltage (r gs =20k ? ) 500 v v gs gate- source voltage 30 v i d drain current (continuous) at t c =25 c 7.2 7.2 (*) a i d drain current (continuous) at t c = 100 c 4.5 4.5 (*) a i dm ( ) drain current (pulsed) 28.8 28.8 (*) a p tot total dissipation at t c =25 c 110 30 w derating factor 0.88 0.24 w/ c v esd(g-s) gate source esd(hbm-c=100pf, r=1.5k ?) 3500 v dv/dt (1) peak diode recovery voltage slope 4.5 v/ns v iso insulation withstand voltage (dc) - 2500 v t j t stg operating junction temperature storage temperature -55to150 -55to150 c c to-220 / d 2 pak / i 2 pak to-220fp rthj-case thermal resistance junction-case max 1.14 4.2 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 7.2 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =50v) 190 mj symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 v www.datasheet.co.kr datasheet pdf - http://www..net/
3/13 stP9NK50Z - stP9NK50Zfp - stb9nk50z - stb9nk50z-1 electrical characteristics (tcase =25 c unless otherwise specified) on/off dynamic switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =1ma,v gs = 0 500 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds =maxrating,t c = 125 c 1 50 a a i gss gate-body leakage current (v ds =0) v gs = 20v 10 a v gs(th) gate threshold voltage v ds =v gs ,i d = 100a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs =10v,i d = 3.6 a 0.72 0.85 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15v , i d = 3.6 a 5.3 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v,f=1mhz,v gs = 0 910 125 30 pf pf pf c oss eq. (3) equivalent output capacitance v gs =0v,v ds = 0v to 400v 75 pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =250v,i d =3.6a r g =4.7 ? v gs =10v (resistive load see, figure 3) 17 20 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =400v,i d =7.2a, v gs =10v 32 6 18 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd =250v,i d =3.6a r g =4.7 ? v gs =10v (resistive load see, figure 3) 45 22 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =400v,i d =7.2a, r g =4.7 ?, v gs = 10v (inductive load see, figure 5) 15 13 30 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 7.2 28.8 a a v sd (1) forwardonvoltage i sd =7.2a,v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7.2 a, di/dt = 100a/s v dd =40v,t j = 150 c (see test circuit, figure 5) 238 1.5 12.6 ns c a www.datasheet.co.kr datasheet pdf - http://www..net/
stP9NK50Z - stP9NK50Zfp - stb9nk50z - stb9nk50z-1 4/13 transfer characteristics output characteristics thermal impedance for to-220fp safe operating area for to-220fp safe operating area for to-220/d2pak/i2pak thermal impedance for to-220/d2pak/i2pak www.datasheet.co.kr datasheet pdf - http://www..net/
5/13 stP9NK50Z - stP9NK50Zfp - stb9nk50z - stb9nk50z-1 gate charge vs gate-source voltage normalized on resistance vs temperature normalized gate threshold voltage vs temp. capacitance variations transconductance static drain-source on resistance www.datasheet.co.kr datasheet pdf - http://www..net/
stP9NK50Z - stP9NK50Zfp - stb9nk50z - stb9nk50z-1 6/13 maximum avalanche energy vs temperature normalized bvdss vs temperature source-drain diode forward characteristics www.datasheet.co.kr datasheet pdf - http://www..net/
7/13 stP9NK50Z - stP9NK50Zfp - stb9nk50z - stb9nk50z-1 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load www.datasheet.co.kr datasheet pdf - http://www..net/
stP9NK50Z - stP9NK50Zfp - stb9nk50z - stb9nk50z-1 8/13 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c www.datasheet.co.kr datasheet pdf - http://www..net/
9/13 stP9NK50Z - stP9NK50Zfp - stb9nk50z - stb9nk50z-1 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.5 0.045 0.067 f2 1.15 1.5 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data www.datasheet.co.kr datasheet pdf - http://www..net/
stP9NK50Z - stP9NK50Zfp - stb9nk50z - stb9nk50z-1 10/13 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 o 8 o d 2 pak mechanical data 3 www.datasheet.co.kr datasheet pdf - http://www..net/
11/13 stP9NK50Z - stP9NK50Zfp - stb9nk50z - stb9nk50z-1 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 a1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 d 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 e 10 10.40 0.393 0.410 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l2 1.27 1.40 0.050 0.055 to-262 (i 2 pak) mechanical data www.datasheet.co.kr datasheet pdf - http://www..net/
stP9NK50Z - stP9NK50Zfp - stb9nk50z - stb9nk50z-1 12/13 tape and reel shipment (suffix ?t4?)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data www.datasheet.co.kr datasheet pdf - http://www..net/
13/13 stP9NK50Z - stP9NK50Zfp - stb9nk50z - stb9nk50z-1 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com www.datasheet.co.kr datasheet pdf - http://www..net/

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